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 MCR08B, MCR08M
Preferred Device
Sensitive Gate Silicon Controlled Rectifiers
Reverse Blocking Thyristors
PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in surface mount package for use in automated manufacturing. * Sensitive Gate Trigger Current * Blocking Voltage to 600 Volts * Glass Passivated Surface for Reliability and Uniformity * Surface Mount Package * Device Marking: MCR08BT1: CR08B; MCR08MT1: CR08M, and Date Code
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SCRs 0.8 AMPERES RMS 200 thru 600 VOLTS
G A K
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Peak Repetitive Off-State Voltage(1) (Sine Wave, RGK = 1000 , TJ = 25 to 110C) MCR08BT1 MCR08MT1 On-State Current RMS (All Conduction Angles; TC = 80C) Peak Non-repetitive Surge Current (1/2 Cycle Sine Wave, 60 Hz, TC = 25C) Circuit Fusing Considerations (t = 8.3 ms) Forward Peak Gate Power (TC = 80C, t = 1.0 s) Average Gate Power (TC = 80C, t = 8.3 ms) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 200 600 IT(RMS) ITSM 0.8 8.0 Amps Amps 1 I2t PGM PG(AV) TJ Tstg 0.4 0.1 0.01 - 40 to +110 - 40 to +150 A2s Watts Watts 2 3 4 Value Unit Volts 1 23 4
SOT-223 CASE 318E STYLE 10
PIN ASSIGNMENT
Cathode Anode Gate Anode
ORDERING INFORMATION
C C Device MCR08BT1 Package SOT223 Shipping 16mm Tape and Reel (1K/Reel) 16mm Tape and Reel (1K/Reel)
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant source such that the voltage ratings of the devices are exceeded.
MCR08MT1
SOT223
Preferred devices are recommended choices for future use and best overall value.
(c) Semiconductor Components Industries, LLC, 2000
1
May, 2000 - Rev. 3
Publication Order Number: MCR08BT1/D
MCR08B, MCR08M
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient PCB Mounted per Figure 1 Thermal Resistance, Junction to Tab Measured on Anode Tab Adjacent to Epoxy Maximum Device Temperature for Soldering Purposes (for 10 Seconds Maximum) Symbol RJA RJT TL Value 156 25 260 Unit C/W C/W C
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current(2) (VAK = Rated VDRM or VRRM, RGK = 1000 ) IDRM, IRRM TJ = 25C TJ = 110C -- -- -- -- 10 200 A A
ON CHARACTERISTICS
Peak Forward On-State Voltage(1) (IT = 1.0 A Peak) Gate Trigger Current (Continuous dc)(3) (VAK = 12 Vdc, RL = 100 ) Holding Current(3) (VAK = 12 Vdc, Initiating Current = 20 mA) Gate Trigger Voltage (Continuous dc)(3) (VAK = 12 Vdc, RL = 100 ) VTM IGT IH VGT -- -- -- -- -- -- -- -- 1.7 200 5.0 0.8 Volts A mA Volts
DYNAMIC CHARACTERISTICS
Critical Rate-of-Rise of Off State Voltage (Vpk = Rated VDRM, TC = 110C, RGK = 1000 , Exponential Method) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) RGK = 1000 is included in measurement. (3) RGK is not included in measurement. dv/dt 10 -- -- V/s
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MCR08B, MCR08M
Voltage Current Characteristic of SCR
+ Current Anode + VTM on state IRRM at VRRM IH
Symbol
VDRM IDRM VRRM IRRM VTM IH
Parameter
Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region Anode -
+ Voltage IDRM at VDRM Forward Blocking Region (off state)
0.15 3.8 0.079 2.0 0.091 0.091 2.3 2.3 0.079 2.0 0.984 25.0 0.059 0.059 0.059 1.5 1.5 1.5
inches mm
0.244 6.2
BOARD MOUNTED VERTICALLY IN CINCH 8840 EDGE CONNECTOR. BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL. MATERIAL: G10 FIBERGLASS BASE EPOXY
0.096 2.44 0.059 1.5
0.096 2.44 0.059 1.5
0.096 2.44
0.472 12.0
Figure 1. PCB for Thermal Impedance and Power Testing of SOT-223
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MCR08B, MCR08M
IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) 10 R JA , JUNCTION TO AMBIENT THERMAL RESISTANCE, ( C/W) 160 150 140 130 120 110 100 90 80 70 60 50 40 30
TYPICAL MAXIMUM DEVICE MOUNTED ON FIGURE 1 AREA = L2 PCB WITH TAB AREA AS SHOWN
L
1.0
L
4
123
0.1 TYPICAL AT TJ = 110C MAX AT TJ = 110C MAX AT TJ = 25C 0 1.0 2.0 3.0 4.0 vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
MINIMUM FOOTPRINT = 0.076 cm2 0 1.0 2.0 3.0 6.0 FOIL AREA (cm2) 4.0 5.0 7.0 8.0 9.0 10
0.01
Figure 2. On-State Characteristics
Figure 3. Junction to Ambient Thermal Resistance versus Copper Tab Area
110 T A , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( C) 1.0 cm2 FOIL, 50 OR 60 Hz HALFWAVE 180 80 70 60 50 40 30 =
CONDUCTION ANGLE
110 100 T A , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( C) 50 OR 60 Hz HALFWAVE 90 80 70 60 50 40 30 20 0 0.1 0.2 0.3 0.4 0.5 120 = 30 60 90 dc 180
ANGLE
= CONDUCTION
100 90
dc
120 = 30 60 90
20
0
0.1
0.2
0.3
0.4
0.5
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
Figure 4. Current Derating, Minimum Pad Size Reference: Ambient Temperature
110 T A , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( C) 100 90 80 70 90 60 50
= CONDUCTION
ANGLE
Figure 5. Current Derating, 1.0 cm Square Pad Reference: Ambient Temperature
110 dc T(tab) , MAXIMUM ALLOWABLE TAB TEMPERATURE ( C) 50 OR 60 Hz HALFWAVE 180 = 30 60 90 120
dc
PAD AREA = 4.0 cm2, 50 OR 60 Hz HALFWAVE 180
= 30 60
120
= CONDUCTION
ANGLE
0
0.1
0.2
0.3
0.4
0.5
85
0
0.1
0.2
0.3
0.4
0.5
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
Figure 6. Current Derating, 2.0 cm Square Pad Reference: Ambient Temperature
Figure 7. Current Derating Reference: Anode Tab
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MCR08B, MCR08M
1.0 0.9 MAXIMUM AVERAGE POWER P(AV),DISSIPATION (WATTS) 0.8 = 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.1 0.2 0.3 0.4 0.5 120 180 dc
CONDUCTION ANGLE
1.0 = 30 60 90 r T , TRANSIENT THERMAL RESISTANCE NORMALIZED
0.1
0.01 0.0001
0.001
0.01
0.1
1.0
10
100
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
t, TIME (SECONDS)
Figure 8. Power Dissipation
VGT , GATE TRIGGER VOLTAGE (VOLTS) 0.7 VAK = 12 V RL = 100 2.0
Figure 9. Thermal Response Device Mounted on Figure 1 Printed Circuit Board
0.5
I H , HOLDING CURRENT (NORMALIZED)
0.6
VAK = 12 V RL = 3.0 k
1.0
0.4
0.3 -40
-20
0
20
40
60
80
110
0 -40
-20
0
20
40
60
80
110
TJ, JUNCTION TEMPERATURE, (C)
TJ, JUNCTION TEMPERATURE, (C)
Figure 10. Typical Gate Trigger Voltage versus Junction Temperature
0.7 V GT , GATE TRIGGER VOLTAGE (VOLTS) 0.65 0.6 0.55 0.5 0.45 0.4 0.35 0.3 0.1 1.0 10 100 1000 VAK = 12 V RL = 100 TJ = 25C 1000 I GT , GATE TRIGGER CURRENT ( A)
Figure 11. Typical Normalized Holding Current versus Junction Temperature
RGK = 1000 , RESISTOR CURRENT INCLUDED
100 VAK = 12 V RL = 100 10 WITHOUT GATE RESISTOR
1.0 -40
-20
0
20
40
60
80
110
IGT, GATE TRIGGER CURRENT (A)
TJ, JUNCTION TEMPERATURE (C)
Figure 12. Typical Range of VGT versus Measured IGT
Figure 13. Typical Gate Trigger Current versus Junction Temperature
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MCR08B, MCR08M
100 TJ = 25C STATIC dv/dt (V/ S) 10 IGT = 48 A 10000 5000 IH , HOLDING CURRENT (mA) 1000 500 100 50 10 5.0 1.0 0.5 0.1 1.0 10 100 1000 10,000 100,000 0.1 10 100 1000 125 110 75 10,000 100,000 50 TJ = 25 Vpk = 400 V
IGT = 7 A 1.0
RGK, GATE-CATHODE RESISTANCE (OHMS)
RGK, GATE-CATHODE RESISTANCE (OHMS)
Figure 14. Holding Current Range versus Gate-Cathode Resistance
10000 1000 500 STATIC dv/dt (V/ S) 100 50 500 V 10 5.0 1.0 10 100 1000 10,000 400 V 50 V
Figure 15. Exponential Static dv/dt versus Junction Temperature and Gate-Cathode Termination Resistance
10000
300 V 200 V 100 V
TJ = 110C 1000 500 STATIC dv/dt (V/ S) 100 50 10 5.0 1.0 0.01
TJ = 110C 400 V (PEAK)
RGK = 100
RGK = 1.0 k
RGK = 10 k 0.1 1.0 10 100 CGK, GATE-CATHODE CAPACITANCE (nF)
RGK, GATE-CATHODE RESISTANCE (OHMS)
Figure 16. Exponential Static dv/dt versus Peak Voltage and Gate-Cathode Termination Resistance
Figure 17. Exponential Static dv/dt versus Gate-Cathode Capacitance and Resistance
10000 1000 500 STATIC dv/dt (V/ S) 100 50 IGT = 70 A 10 5.0 1.0 10 100 IGT = 15 A 1000 10,000 100,000 IGT = 5 A IGT = 35 A
GATE-CATHODE RESISTANCE (OHMS)
Figure 18. Exponential Static dv/dt versus Gate-Cathode Termination Resistance and Product Trigger Current Sensitivity
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MCR08B, MCR08M INFORMATION FOR USING THE SOT-223 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection
0.15 3.8 0.079 2.0
interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
0.091 2.3 0.079 2.0 0.059 1.5 0.059 1.5
0.091 2.3
0.248 6.3
0.059 1.5
inches mm
SOT-223
SOT-223 POWER DISSIPATION The power dissipation of the SOT-223 is a function of the anode pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT-223 package, PD can be calculated as follows:
PD = TJ(max) - TA RJA
The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 550 milliwatts.
PD = 110C - 25C = 550 milliwatts 156C/W
The 156C/W for the SOT-223 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 550 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-223 package. One is to increase the area of the anode pad. By increasing the area of the anode pad, the power dissipation can be increased. Although one can almost double the power dissipation with this method, one will be giving up area on the printed circuit board which can defeat the purpose of using surface mount technology. A graph of RJA versus anode pad area is shown in Figure 3. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.
SOLDER STENCIL GUIDELINES Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. A solder stencil is required to screen the optimum amount of solder paste onto the footprint. The stencil is made of brass or stainless steel with a typical thickness of 0.008 inches. The stencil opening size for the SOT-223 package should be the same as the pad size on the printed circuit board, i.e., a 1:1 registration.
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MCR08B, MCR08M
SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10C. * The soldering temperature and time should not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient should be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
TYPICAL SOLDER HEATING PROFILE For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings make up a heating "profile" for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 19 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177-189C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints.
STEP 1 PREHEAT ZONE 1 "RAMP" 200C
STEP 2 STEP 3 VENT HEATING "SOAK" ZONES 2 & 5 "RAMP" DESIRED CURVE FOR HIGH MASS ASSEMBLIES 150C
STEP 5 STEP 6 STEP 7 STEP 4 HEATING VENT COOLING HEATING ZONES 3 & 6 ZONES 4 & 7 205 TO "SPIKE" "SOAK" 219C 170C PEAK AT SOLDER 160C JOINT SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY)
150C 100C 100C DESIRED CURVE FOR LOW MASS ASSEMBLIES 50C 140C
TIME (3 TO 7 MINUTES TOTAL)
TMAX
Figure 19. Typical Solder Heating Profile
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MCR08B, MCR08M
PACKAGE DIMENSIONS
SOT-223 CASE 318E-04 ISSUE J
A F
4
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.
S
1 2 3
B
D L G J C 0.08 (0003) H M K
INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0_ 10 _ S 0.264 0.287
MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0_ 10 _ 6.70 7.30
STYLE 10: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE
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MCR08B, MCR08M
Notes
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10
MCR08B, MCR08M
Notes
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11
MCR08B, MCR08M
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303-675-2167 or 800-344-3810 Toll Free USA/Canada N. American Technical Support: 800-282-9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor - European Support German Phone: (+1) 303-308-7140 (M-F 1:00pm to 5:00pm Munich Time) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308-7141 (M-F 1:00pm to 5:00pm Toulouse Time) Email: ONlit-french@hibbertco.com English Phone: (+1) 303-308-7142 (M-F 12:00pm to 5:00pm UK Time) Email: ONlit@hibbertco.com EUROPEAN TOLL-FREE ACCESS*: 00-800-4422-3781 *Available from Germany, France, Italy, England, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: 303-308-7143 (Mon-Fri 8:00am to 5:00pm MST) Email: ONlit-spanish@hibbertco.com ASIA/PACIFIC: LDC for ON Semiconductor - Asia Support Phone: 303-675-2121 (Tue-Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001-800-4422-3781 Email: ONlit-asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2745 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local Sales Representative.
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MCR08BT1/D


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